High-power plasma discharge source at 13.5 nm and 11.4 nm for EUV lithography

William T. Silfvast; M. Klosner; Gregory M. Shimkaveg; Howard Bender; Glenn D. Kubiak; Neal R. Fornaciari

doi:10.1117/12.351098

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25 June 1999 High-power plasma discharge source at 13.5 nm and 11.4 nm for EUV lithography

William T. Silfvast, M. Klosner, Gregory M. Shimkaveg, Howard Bender, Glenn D. Kubiak, Neal R. Fornaciari

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Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351098
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

An intense pulsed capillary discharge source operating at 13.5 nm and 11.4 nm, suitable for use in conjunction with Mo:Si or Mo:Be coated optics, has produced an average power of approximately 1.4W within a 0.3 nm emission bandwidth from the end of the capillary when operated at a repetition rate of 100 Hz. The source is comprised of a small capillary discharge tube filled with xenon gas at low pressure to which electrodes are attached at each end. When a voltage is applied across the tube, an electrical current is generated for short periods within the capillary that produces highly ionized xenon ions radiating in the EUV. Issues associated with plasma bore erosion are currently being addressed from the standpoint of developing such a source for operation at repetition rates of greater than 1 kHz.

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William T. Silfvast, M. Klosner, Gregory M. Shimkaveg, Howard Bender, Glenn D. Kubiak, and Neal R. Fornaciari "High-power plasma discharge source at 13.5 nm and 11.4 nm for EUV lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351098

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