You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
25 June 1999High-power plasma discharge source at 13.5 nm and 11.4 nm for EUV lithography
An intense pulsed capillary discharge source operating at 13.5 nm and 11.4 nm, suitable for use in conjunction with Mo:Si or Mo:Be coated optics, has produced an average power of approximately 1.4W within a 0.3 nm emission bandwidth from the end of the capillary when operated at a repetition rate of 100 Hz. The source is comprised of a small capillary discharge tube filled with xenon gas at low pressure to which electrodes are attached at each end. When a voltage is applied across the tube, an electrical current is generated for short periods within the capillary that produces highly ionized xenon ions radiating in the EUV. Issues associated with plasma bore erosion are currently being addressed from the standpoint of developing such a source for operation at repetition rates of greater than 1 kHz.
The alert did not successfully save. Please try again later.
William T. Silfvast, M. Klosner, Gregory M. Shimkaveg, Howard Bender, Glenn D. Kubiak, Neal R. Fornaciari, "High-power plasma discharge source at 13.5 nm and 11.4 nm for EUV lithography," Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351098