EUVL is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA roadmap well into the 21st Century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme UV at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80 percent of the exposure plane CD will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm2 at 80 nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm2 for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm2 in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling.