Low-energy e-beam proximity projection lithography

Takao Utsumi

doi:10.1117/12.351084

25 June 1999 Low-energy e-beam proximity projection lithography

Takao Utsumi

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351084
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Low energy e-beam proximity projection lithography is proposed for integrated circuit lithography for minimum feature sizes <EQ 0.1 micrometers . This new e-beam lithography is similar to optical projection lithography except that photons are replaced by low energy electrons. The low e-beam energy permits the use of single crystal 0.5 micrometers thick silicon membrane masks without an absorbing metal layer of high atomic number. The membrane mask is thick enough for good heat conduction and thin enough for feature sizes <EQ 0.1 micrometers . The proposed system does not suffer form space charge or proximity effects and is fundamentally a low voltage and low power density lithography with respect to both the mask and the wafer. We predict a throughput of 30 12 inch wafers per hour. Furthermore, the cost of this tool is predicted to be considerably less than today's advanced optical steppers.

Citation Download Citation

Takao Utsumi "Low-energy e-beam proximity projection lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351084

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