25 June 1999 MOSCASEL: a total solution to electron-beam lithography simulation
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Abstract
Electron beam lithography is favored as one of the options for microlithography of ICs at below 150 nm resolution regime. To assist lithography process development, computer simulations are widely used. Current simulation packages for electron beam lithography are only able to offer simple solutions. A new simulation package MOCASEL is presented in this paper which offers a total solution to many issues encountered in current and future application of e-beam lithography. A number of modules have been built into the package, which can simulate not only 2D and 3D resist profiles on a flat substrate but on a topographical substrate. Proximity effect correction can be simulated to check its effectiveness. Signals from alignment mark detection can be calculated. Heating effect due to e-beam irradiation of resist can be estimated. All these modules are explained in the paper with simulation examples in the form of 2D and 3D resists profiles.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zheng Cui, "MOSCASEL: a total solution to electron-beam lithography simulation", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351122; https://doi.org/10.1117/12.351122
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