25 June 1999 Predicting mechanical distortions in x-ray masks
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The development of a low distortion mask is essential for advanced lithographic technologies to meet the allotted error budgets for sub-130 nm regimes. Predicting mask- related distortions is the first step in the design and optimization process. This paper presents the result of simulating mechanical distortions induced in the x-ray mask during fabrication and pattern transfer. Finite element (FE) models have been used to predict the out-of-plane distortions for the fabrication of the mask blank. Numerical data are in excellent agreement with experimental data. In- plane distortions due to the pattern transfer process have also been simulated for the IBM Falcon mask layout. Parametric studies illustrate the effect of system parameters on the final in-plane distortion results.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric P. Cotte, Roxann L. Engelstad, Edward G. Lovell, Cameron J. Brooks, "Predicting mechanical distortions in x-ray masks", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351116; https://doi.org/10.1117/12.351116


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