25 June 1999 Predicting mechanical distortions in x-ray masks
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The development of a low distortion mask is essential for advanced lithographic technologies to meet the allotted error budgets for sub-130 nm regimes. Predicting mask- related distortions is the first step in the design and optimization process. This paper presents the result of simulating mechanical distortions induced in the x-ray mask during fabrication and pattern transfer. Finite element (FE) models have been used to predict the out-of-plane distortions for the fabrication of the mask blank. Numerical data are in excellent agreement with experimental data. In- plane distortions due to the pattern transfer process have also been simulated for the IBM Falcon mask layout. Parametric studies illustrate the effect of system parameters on the final in-plane distortion results.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric P. Cotte, Eric P. Cotte, Roxann L. Engelstad, Roxann L. Engelstad, Edward G. Lovell, Edward G. Lovell, Cameron J. Brooks, Cameron J. Brooks, } "Predicting mechanical distortions in x-ray masks", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351116; https://doi.org/10.1117/12.351116


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