25 June 1999 Production of SCALPEL masks in a commercial mask facility
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The purpose of this paper is to investigate the viability of fabricating SCALPEL masks at a DuPont Photomasks, Inc. commercial mask shop. The MEBES 4500 electron beam exposure system and standard inspection tools were used in SCALPEL manufacture to study the key issues to be overcome and the key components needed to succeed in large-scale manufacture. SCALPEL is a next generation lithography technology being researched and developed at Lucent Technologies as the semiconductor industry moves beyond optical lithography. The SCALPEL tool uses a membrane-type mask for high-resolution patterning on Si wafers. SCALPEL mask manufacturing present new and challenging operations in a commercial mask production facility. The production sequence of SCALPEL masks is not uncommon to the current Cr/Qz environment, but introduces the commercial facility to issues at a different level. SCALPEL mask exposure has been accomplished using MEBES III and an advanced MEBES 4500 e-beam lithography system. Pattern imaging, CD metrology, defect inspection, registration metrology, mask handling, and cleaning operations have been attempted with various levels of success. Data and further development of the processes in the commercial facility, along with the challenges and results of these experiences, are detailed in this presentation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris L. Newport, Chris L. Newport, Jeffrey Parker, Jeffrey Parker, K. Michael Smith, K. Michael Smith, Albert Benveniste, Albert Benveniste, Nam-Wook Kim, Nam-Wook Kim, David Reyland, David Reyland, Reginald C. Farrow, Reginald C. Farrow, Anthony E. Novembre, Anthony E. Novembre, Richard J. Kasica, Richard J. Kasica, Chester S. Knurek, Chester S. Knurek, Milton L. Peabody, Milton L. Peabody, Len Rutberg, Len Rutberg, "Production of SCALPEL masks in a commercial mask facility", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351088; https://doi.org/10.1117/12.351088

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