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25 June 1999 Self-supporting tantalum masks for deep x-ray lithography with synchrotron radiation
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Abstract
Development of the present-day technologies of manufacturing deep structures with submicron elements based on the deep x- ray lithography method with the usage of synchrotron radiation. Microelectronics used x-ray patterns with a 1.0 micrometers golden masking covering on different-type membranes become of unfit in this case both from the angle of contrast and from the standpoint of radiation and heat stability. X- ray patterns with the membrane on the base of tantalum 2 micrometers thick, that are high contrasting as to synchrotron radiation with wavelength of 0.2 to 1.0 nm, have been developed and manufactured. A set of pores 0.7 micrometers in diameter 1.5 micrometers apart in two directions was formed as the topological pattern.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey V. Litvin, Vasily G. Kanaev, Elena G. Larionova, Nina V. Glazunova, Ludmila P. Gromova, Vasily I. Yurchenko, Nikolai A. Timchenko, Lubov A. Mezentseva, Vladimir Nazmov, and Valery F. Pindyurin "Self-supporting tantalum masks for deep x-ray lithography with synchrotron radiation", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351115
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