Sub-100-nm imaging in x-ray lithography

Olga Vladimirsky; Niru V. Dandekar; Wenlong Jiang; Quinn J. Leonard; Klaus Simon; Srinivas B. Bollepalli; Yuli Vladimirsky; James Welch Taylor

doi:10.1117/12.351161

25 June 1999 Sub-100-nm imaging in x-ray lithography

Olga Vladimirsky, Niru V. Dandekar, Wenlong Jiang, Quinn J. Leonard, Klaus Simon, Srinivas B. Bollepalli, Yuli Vladimirsky, James Welch Taylor

Author Affiliations +

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351161
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

This paper analyzes and demonstrates the possibility of producing lithographic images at or below the 'diffraction limit' for synchrotron radiation-based x-ray proximity lithography. It is shown that at reasonable mask/wafer gaps of 15-30 micrometers , for feature sizes down to approximately 100 nm, a 30-40 nm uniform positive bias is observed. In proximity lithography, masks with clear features on a dark background demonstrate better linewidth control and more stable process optimization in terms of achieving smaller features: Sub-100 nm imaging requires positive bias for mask features: clear features have to be increased in sizes and the proper bias will depend on the mask/wafer gap. Features down to 43-46 nm have been formed in negative resists, and down to 60 nm in positive resist. The extendibility of synchrotron radiation-based x-ray proximity lithography into the sub-50 nm region at reasonable mask/wafer gaps of 20-30 micrometers was demonstrated.

Citation Download Citation

Olga Vladimirsky, Niru V. Dandekar, Wenlong Jiang, Quinn J. Leonard, Klaus Simon, Srinivas B. Bollepalli, Yuli Vladimirsky, and James Welch Taylor "Sub-100-nm imaging in x-ray lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351161

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