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25 June 1999 Sub-100-nm pattern fabrication using LB resist and e-beam or synchrotron radiation excited plasma
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For fine pattern fabrication using e-beam lithography, the resist film thickness must be decreased, and therefore, the plasma etching process must be reformed. We have proposed the use of Electron Beam Excited Plasma (EBEP) and Synchrotron Radiation Excited Plasma (SREP) etching techniques for fine pattern etching. Our EBEP reactor uses a 1 micrometers thick polyimide interface film, which isolates the reactor from the e-beam source but allows electron transmission at the same time. The transmission of high energy electrons through the interface film cause ablation of the interface film and deposition of carbonaceous film on the substrate in the reactor. From the study of this phenomenon in Ar atmosphere, it was found that the ablated species are charged with either polarity. However, a pronounced and non-uniform deposition was observed for a particular substrate holder, which caused non-uniform electric field near the substrate. Thus, with an improved substrate holder, silicon etching was realized in CF4 gas. This etching could be observed only under negative bias condition, as seen earlier for SREP etching. Sub 100 nm line and space patterns were successfully etched with SREP and EBEP etching techniques using ultra thin Langmuir BLodgett stearic acid resist.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Girish J. Phatak, Shinji Ogawa, Mohd Zalid Bin Harun, and Shinzo Morita "Sub-100-nm pattern fabrication using LB resist and e-beam or synchrotron radiation excited plasma", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999);


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