25 June 1999 Sub-40-nm pattern replication with +/- 20% process latitude by soft-contact x-ray lithography
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Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999); doi: 10.1117/12.351076
Event: Microlithography '99, 1999, Santa Clara, CA, United States
Abstract
This paper presents soft-contact x-ray lithography exposure results at sub-40 nm length scales and shows that the process latitude for such exposures is extremely wide. For feature sizes as large as 70 nm and as small as 30 nm in PMMA resist, no statistically significant difference in printed linewidth is seen for development times up to 50 percent greater than the time required for clearing of features. Within this 50 percent development window, dense features as small as 45 nm and isolated features as small as 30 nm are within a +/- 10 percent CD variation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. D. Carter, Henry I. Smith, Kee Woo Rhee, Christie R. Marrian, "Sub-40-nm pattern replication with +/- 20% process latitude by soft-contact x-ray lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351076; https://doi.org/10.1117/12.351076
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KEYWORDS
Photomasks

X-rays

X-ray lithography

Nanolithography

Scanning electron microscopy

Image processing

Electrons

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