Thermomechanical distortions of ion-beam stencil masks during exposure

Po-Tung Lee; Byung-Kyu Kim; Gary A. Frisque; Richard O. Tejeda; Roxann L. Engelstad; Edward G. Lovell; William A. Beckman; John W. Mitchell

doi:10.1117/12.351146

25 June 1999 Thermomechanical distortions of ion-beam stencil masks during exposure

Po-Tung Lee, Byung-Kyu Kim, Gary A. Frisque, Richard O. Tejeda, Roxann L. Engelstad, Edward G. Lovell, William A. Beckman, John W. Mitchell

Author Affiliations +

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351146
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Meeting the stringent requirements on pattern placement in the sub-130 nm regime will be a challenge for any Next Generation Lithography. A key issue for all technologies will be the development of a low distortion mask. This paper describes the thermomechanical simulations performed on the ion-beam projection lithography (IPL) mask to predict distortions during exposure. Pattern-specific global distortions are identified using equivalent modeling techniques, which are based upon the use of equivalent thermal properties are presented. Finite element heat transfer and structural models have been developed to employ these equivalent properties. To demonstrate the modeling procedures, predictions of the thermomechanical response of the stencil mask for the IBM Talon layout were performed. The finite element results illustrate that by optimizing the design parameters of the exposure system, IPL mask distortions can be controlled to meet the allotted error budgets.

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Po-Tung Lee, Byung-Kyu Kim, Gary A. Frisque, Richard O. Tejeda, Roxann L. Engelstad, Edward G. Lovell, William A. Beckman, and John W. Mitchell "Thermomechanical distortions of ion-beam stencil masks during exposure", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351146

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