14 June 1999 Broadband planarizing antireflective coating for i-line, DUV, and 193-nm microlithographic applications
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Abstract
A fast-etching broad band bottom anti-reflective coating (BARC) for photoresist applications at the wavelength of 365nm, 248nm and 193nm was developed. The new BARC formulated in safe solvents such as ethyl lactate and PGME exhibits wide spin bowl compatibility with various photoresists, and can be processed with common edge bead removal solvents. The optical properties of the new BARC are tailored for high contrast resist systems, with film optical density exceeding 4.2 micrometers at 365 nm, 7.5 micrometers at 248 nm and 8.5 micrometers at 193 nm. Most importantly, we have demonstrated plasma etch rates of the new coating in excess of 1.5-2.0 times that of conventional i-line and DUV photoresist. The compatibility of this material with multi resists at all three wavelengths will be discussed as well as trade-offs versus dedicated single wavelength BARC systems.
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Xie Shao, James E. Lamb, James B. Claypool, William J. Simmons, Earnest C. Murphy, "Broadband planarizing antireflective coating for i-line, DUV, and 193-nm microlithographic applications", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350877; https://doi.org/10.1117/12.350877
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