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14 June 1999 High-aspect-ratio depth determination using nondestructive AFM
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ULSI processing for the manufacture of devices such as DRAMs involves fabrication of several high aspect ratio structures. The determination and control of depth of these structures is crucial for device performance. We report the utilization of Atomic Force Microscopy to characterize 0.2 micrometers ground rule products. Features with 2.1 micrometers depth and 0.2 micrometers top nominal top width dimensions can be consistently measured. TO accomplish this a recently developed Deep Trench scan mode is employed and used in conjunction with new Super Angle Tapered CD and Super Angle COne tips. New analysis algorithms are developed to extract eh data in a repeatable from width decreased sensitivity to changes in tip size, top shape, and sample.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V.C. Jai Prakash, Mark E. Lagus, A. Meyyappan, and Sylvain Muckenhirn "High-aspect-ratio depth determination using nondestructive AFM", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999);

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