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14 June 1999 High-resolution UV wavelength reticle contamination inspection
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Abstract
A new reticle inspection system with laser UV imaging for contamination inspection has been developed to detect contamination defects on advanced reticles for DUV steppers and low k1 lithography. The extension to UV wavelength improves the resolution of the imaging optics while maintaining compatibility with current STARlight inspection algorithms, thus improving both sensitivity and minimum linewidth capability. This enables inspection of reticles for 4X lithography design rules at 0.18 micrometers , 0.15 micrometers and 0.13 micrometers . The system also is capable of inspecting Tri-Tone PSM and reticles with OPC assist bars.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Franklin D. Kalk, William Waters Volk, James N. Wiley, Ed Hou, and Sterling G. Watson "High-resolution UV wavelength reticle contamination inspection", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350872
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