Improve the accuracy and sensitivity of CD-SEM linewidth measurement for deep-submicron polygate pattern transfer

Xin Mei; Ming Hui Fan; Alex Tsun-Lung Cheng

doi:10.1117/12.350786

14 June 1999 Improve the accuracy and sensitivity of CD-SEM linewidth measurement for deep-submicron polygate pattern transfer

Xin Mei, Ming Hui Fan, Alex Tsun-Lung Cheng

Author Affiliations +

Proceedings Volume 3677, Metrology, Inspection, and Process Control for Microlithography XIII; (1999) https://doi.org/10.1117/12.350786
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

As the feature sizes continue to shrink, the requirements for precision and accuracy of CD-SEM metrology become more and more critical. For line width measurements, the uncertainty in edge position determination due to measurement algorithms is an important source of error in CD metrology. To improve the accuracy of CD-SEM system, an appropriate algorithm for a specified type of feature must be determined by comparison to a suitable reference tool. A good algorithm should also be sensitive to process variation and therefore characterize the process drift accurately. In this report we present a systematic method to optimize linear approximation for monitoring 0.25 micrometers polygate pattern linewidth measurement on Hitachi high resolution CD- SEM.

Citation Download Citation

Xin Mei, Ming Hui Fan, and Alex Tsun-Lung Cheng "Improve the accuracy and sensitivity of CD-SEM linewidth measurement for deep-submicron polygate pattern transfer", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350786

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