14 June 1999 Instrumentation of a deep-UV microscope resolving less than 0.15 μm
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Remarkable improvement in resolution when observing critical dimensions in semiconductor inspection by using a newly- developed deep-UV optical microscope is presented. At present, while scanning electron microscope (SEM) is the only imaging tool for less than 0.20-micron geometry, improvement in resolution of optical microscope has strongly been desired because of its easier operations and less damage including feature. Simulation of resolution to be achieve indicated that deep-UV wavelength only clearly resolve less than 0.15-micron geometry and images acquired at 266nm in the following experiment well agreed with the simulation. An objective lens especially for deep-UV, laser light source, illumination and imaging optics, and image detection device were built on a conventional microscope stand. This high-resolution microscope may extend the field of optical inspection and even open up new inspection applications.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsumi Ogino, Katsumi Ogino, Jiro Mizuno, Jiro Mizuno, Atushi Takeuchi, Atushi Takeuchi, Noboru Amemiya, Noboru Amemiya, Yasuo Yonezawa, Yasuo Yonezawa, Toshiaki Nihoshi, Toshiaki Nihoshi, Hisao Osawa, Hisao Osawa, Hiroshi Ooki, Hiroshi Ooki, } "Instrumentation of a deep-UV microscope resolving less than 0.15 μm", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350803; https://doi.org/10.1117/12.350803


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