14 June 1999 Role of LV-SEM reticle CD measurements on DUV lithography
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In this work, we investigate the role of low voltage reticle CD-SEM measurements on DUV lithography. We compare reticle measurements carried out on tow different CD-SEMs and optical measurements as typically carried out at mask shops. CD-SEM measurements using the 50 percent derivative algorithm on the KLA 8100ER CD-SEM and the 50 percent threshold algorithm on the Hitachi 6100 CD-SEM show good correlation with the optical measurements. As examples for the importance of LV CD-SEM reticle measurements we show the influence of proximity effects during reticle printing on CD variations on reticle level by comparing the values obtained on the reticle and on the wafer. Finally, we determine mask error factors. The MEF has to be taken into account to compare wafer and reticle CDs. We show that it does not change for wafer measurement after lithography and after poly-etch. The use of different metrology tools or electrical linewidth measurements does not influence the MEF.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Marschner, Thomas Marschner, Ivan K.A. Pollentier, Ivan K.A. Pollentier, Goedele Potoms, Goedele Potoms, Rik M. Jonckheere, Rik M. Jonckheere, Kurt G. Ronse, Kurt G. Ronse, Marco Polli, Marco Polli, } "Role of LV-SEM reticle CD measurements on DUV lithography", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350870; https://doi.org/10.1117/12.350870

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