11 June 1999 Antireflective coating strategies for 193-nm lithography
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Abstract
The need for antireflective layers for good lithographic performance is a necessity for 193 nm wavelength exposures. In this paper we will illustrate two solutions for reflectivity control. The first is a spin-on organic bottom antireflectivity coating optimized for 193nm resist and the other is an inorganic film, SiOxNy.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan Stephen, Alan Stephen, Kim R. Dean, Kim R. Dean, Jeff D. Byers, Jeff D. Byers, } "Antireflective coating strategies for 193-nm lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350184; https://doi.org/10.1117/12.350184
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