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11 June 1999 Application of polysilanes for deep-UV antireflective coating
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Application of polysilanes for a deep UV (DUV) bottom anti- reflective coating (BARC), in order to resolve the problem posed by the insufficient anti-reflection with thin conventional organic BARC applied on transparent dielectric film, is described. The newly developed polysilane anti- reflective coating has the real part of refractive index, n equals 2.00, and the imaginary part, k equals 0.23 at 248 nm. The polysilane coating is immiscible with a chemically amplified photoresist, and is not removable during normal wet development of photoresist. Etching rate of the polysilane is 2 times faster than that of DUV resist during BARC etching, and lower than that of DUV resist during dielectric film etching. The polysilane layer is easily removed by ashing using O2 gas process. Using thick polysilane coating, it can realize both the suppression of the interface reflection between the resist and BARC and good critical dimension control on dielectric film.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasunobu Onishi, Yasuhiko Sato, Eishi Shiobara, Seiro Miyoshi, Hideto Matsuyama, Junko Abe, Hideo Ichinose, Tokuhisa Ohiwa, Yoshihiko Nakano, Sawako Yoshikawa, and Shuzi Hayase "Application of polysilanes for deep-UV antireflective coating", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999);

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