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11 June 1999 ArF photoresist system: using cycloolefin-alt-maleic anhydride pericyclic acrylate terpolymers
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Abstract
The design of photoresists for 193 nm exposure systems has received extensive attention, with variable lithograph processes based on single layer resist as well as bi-layer and top surface imaging resists already been developed. Single layer resist systems can generally be divided into two classes: alicyclic and acrylic based on the polymer backbone. In acrylic systems, etching resistance is achieved by attaching pendant groups that have low Ohnishi numbers. In alicyclic systems, the high etching resistant substituent is directly incorporated in the backbone. Excellent ArF single layer photoresists have been derived form both types of polymers in several investigations. This work report on terpolymers of maleic anhydride, t-butyl-5-norbornene-2- carboxylate and polycyclic methacrylate derivatives as a resin for ArF photoresists formulated. Using these terpolymers which have a compatible property for 2.38 wt percent TMAH developer. The effects of terpolymers, type of PAG, dissolution inhibitors, base component, baking temperature and time delay on ArF SLR are also investigated.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sheng-Yueh Chang, Kung-Lung Cheng, Bang-Chein Ho, Jui-Fa Chang, Jian-Hong Chen, Ting-Chung Liu, and Tzu-Yu Lin "ArF photoresist system: using cycloolefin-alt-maleic anhydride pericyclic acrylate terpolymers", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350193
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