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11 June 1999 Block copolymers as additives: a route to enhanced resist performance
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Abstract
The role of block copolymers as additives for improving resist performance in the area of 193 nm lithography is investigated in this study. We have demonstrated that specifically designed block copolymers when tailored to resist matrices to which they are added can profoundly enhance resist imaging performance. This improvement can be attributed to the ability of the block copolymers to modify surface and interfaces and to control photoacid generator distribution within the resist film. Ion beam techniques such as Rutherford Backscattering and Forward Recoil Spectrometry, used to analyze the distribution and segregation behavior of the photoacid generators and block copolymer additives, will also be described.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Narayan Sundararajan, Kenji Ogino, Suresh Valiyaveettil, Jianguo Wang, Shu Yang, Atsushi Kameyama, Christopher Kemper Ober, Robert D. Allen, and Jeff D. Byers "Block copolymers as additives: a route to enhanced resist performance", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350144
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