11 June 1999 Characterization of advanced DUV photoresists
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Abstract
The first objective of this project was to characterize the lithographic performance of an advanced Acetal-based DUV resists. This resist is targeted for 0.25-0.18 micron geometries. The sensitivity of film thickness and uniformity to critical process parameters such as final dry spin time in the coater, soft bake time, soft bake temperature, method of soft bake, exhaust and vacuum levels in the soft bake were investigated. The second objective was to compare the material and lithographic performance properties of the advanced Acetal-based DUV resist, an advanced ESCAP-based DUV resists, and a third generation i-line resist. An advanced SVG track system that was clustered with an advanced Micrascan was used in these experiments. This lithography cluster tool represents a typical high volume production tool for device features of 0.25-micron and below.
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Murthy S. Krishna, Emir Gurer, Ed C. Lee, John W. Lewellen, Kevin M. Golden, John W. Salois, Gary E. Flores, Scott C. Wackerman, Reese M. Reynolds, "Characterization of advanced DUV photoresists", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350183; https://doi.org/10.1117/12.350183
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