Chemically amplified negative resist optimized for high-resolution x-ray lithography

Jiro Nakamura; Yoshio Kawai; Kimiyoshi Deguchi; Masatoshi Oda; Tadahito Matsuda

doi:10.1117/12.350228

11 June 1999 Chemically amplified negative resist optimized for high-resolution x-ray lithography

Jiro Nakamura; Yoshio Kawai; Kimiyoshi Deguchi; Masatoshi Oda; Tadahito Matsuda;

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350228
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

We have developed a three-component negative resist for x- ray lithography which is composed of monodispersed polyhydroxystyrene as a base polymer, hexamethoxymethylmelamine as a cross-linker, and alicyclic- bromides containing ketonic groups as an acid generator. To enlarge the contrast of the dissolution rate between the exposed and unexposed films, polyhydroxystyrene was partially protected by t-butoxycarbonyl groups and organic bases were added to the resist component. Among the bromic compounds we evaluated as acid generators, the alicyclic- bromides containing ketonic groups produced hydrobromic acids most efficiently. The resolution of the new resist remains nice down to 80-nm line-and-space patterns at a proximity gap of 20 micrometers , and 70-nm patterns at a gap of 10 micrometers with a resist sensitivity of 150 mJ/cm².

Citation Download Citation

Jiro Nakamura, Yoshio Kawai, Kimiyoshi Deguchi, Masatoshi Oda, Tadahito Matsuda, "Chemically amplified negative resist optimized for high-resolution x-ray lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350228; https://doi.org/10.1117/12.350228

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