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11 June 1999 Chemically amplified resist based on the methacrylate polymer with 2-trimethylsilyl-2-propyl ester protecting group
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Abstract
Poly(2-trimethylsilyl-2-propyl methacrylate-co-(gamma) - butyrolactone-2-yl methacrylate) was synthesized and evaluated as a potential dry-developable chemically amplified photoresist. When the counterion of the photogenerated acid does not provide a fluoride ion, e.g., sulfonate, the carbonium ion undergoes elimination to produce 2,2,3-trimethyl-2-silabut-3-ene, and regenerates another acid. The deprotection of 2-trimethylsilyl-2-propyl group of the polymer takes place in the exposed region after post-exposure bake. The difference of silicon content between the unexposed and exposed regions is large enough to form patterns using oxygen reactive-ion etching. Poly(2- trimethylsilyl-2-propyl methacrylate-co-(gamma) - butyrolactone-2-yl methacrylate) was evaluated as a resists for ArF excimer laser lithography. 0.24 micrometers line/space patterns were obtained using the conventional developer with an ArF excimer laser stepper. 1 micrometers line/spacer patterns were obtained using dry development process with O2 reactive ion etching.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Baek Kim, Hyun-Woo Kim, Si-Hyeung Lee, Sang-Jun Choi, and Joo-Tae Moon "Chemically amplified resist based on the methacrylate polymer with 2-trimethylsilyl-2-propyl ester protecting group", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350224
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