11 June 1999 Chemically amplified resists: past, present, and future
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The chemical amplification concept is based on the use of a photochemically-generated acid as a catalyst, which indices a cascade of chemical transformations in the resist film, providing a gain mechanism. This lithographic imaging strategy invented in 1980 has been fully accepted by the microelectronics industry and implemented in manufacture of devices by deep UV lithography employing a KrF excimer laser. The resist systems currently being developed for the next generation ArF excimer laser lithography are also built on chemical amplification. This paper reviews the development, current status, and future of chemical amplification resist.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Ito, Hiroshi Ito, "Chemically amplified resists: past, present, and future", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350143; https://doi.org/10.1117/12.350143

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