11 June 1999 Controlled developing time for higher-resolution i-line photoresist
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Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999); doi: 10.1117/12.350231
Event: Microlithography '99, 1999, Santa Clara, CA, United States
Abstract
A kind of naphthoquinone diazide esters which has strong surface inhibition on exposed area has been found and is applied to non bulk effect and higher resolution i-line photoresist fabrication. Overall developing time, it consists of dissolution time of the surface inhibition layer and developing time of exposed photoresist under the surface inhibition layer and to control the dissolution time and the developing time results in non bulk effect photoresist fabrication, and where DRM, Development Rate Monitor, was used to analyze this phenomenon.
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Yutaka Saito, Tatsuya Yamada, Kunio Itoh, "Controlled developing time for higher-resolution i-line photoresist", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350231; https://doi.org/10.1117/12.350231
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KEYWORDS
Photoresist materials

Picture Archiving and Communication System

Refractive index

Semiconducting wafers

FT-IR spectroscopy

Electroluminescence

Photoresist developing

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