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11 June 1999 Design and development of high-performance 193-nm positive resist based on functionalized poly(cyclicolefins)
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Abstract
One of the major factors that seem to limit the development of practically useful 193nm resist materials has been their low reactive-ion-etch (RIE) resistance. In this paper, we have shown convincingly that the RIE stability of poly(cyclicolefins) is superior to that of the alternating copolymers such as poly(norbornene-anhydride), and poly(acrylates). We have also shown that a high performance 193nm resist can be developed from functionalized poly(norbornenes) using appropriate formulation and process optimizations.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pushkara Rao Varanasi, J. Maniscalco, Ann Marie Mewherter, Margaret C. Lawson, George M. Jordhamo, Robert D. Allen, Juliann Opitz, Hiroshi Ito, Thomas I. Wallow, Donald C. Hofer, Leah Langsdorf, Saikumar Jayaraman, and Richard Vicari "Design and development of high-performance 193-nm positive resist based on functionalized poly(cyclicolefins)", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350251
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