11 June 1999 Effect of developer normality on the resist dissolution rate and performance
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Abstract
Process simulation is necessary to investigate possible enhancements of some selective resist performance properties as a result of changes in the developer concentration. Accurate dissolution parameters are needed for different developer normalities to simulate their effect on the resist dissolution rates. Only qualitative similarities are observed in the dissolution behavior of similar chemistry based resist as a function of developer normalities. Quantitative differences in the dissolution rates and curve shapes are detected between resist based on different chemistries. No single universal dissolution model capable of describing the behavior of all different resists was found. However, individual resist dissolution/developer concentration models can be constructed.
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Medhat A. Toukhy, Medhat A. Toukhy, Brian Maxwell, Brian Maxwell, Somboun Chanthalyma, Somboun Chanthalyma, } "Effect of developer normality on the resist dissolution rate and performance", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350259; https://doi.org/10.1117/12.350259
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