11 June 1999 Effect of developer temperature and normality on chemically amplified photoresist dissolution
Author Affiliations +
Abstract
The effects of developer temperature and developer normality on the dissolution behavior of a 248nm chemically amplified resist are examined using development rate measurements. Using a RDA-790 development rate measurement tool employing a 470nm Blue LED measurement wavelength, dissolution rats as a function of dose and depth into the resist were measured. Each data set was analyzed and the performance of rate versus t-BOC concentration was fit to appropriate models. The variation of these results with developer temperature has led to further temperature-dependent characterization of the dissolution modeling parameters. The variation of dissolution rate with developer normality has led to an initial characterization of the normality-dependent dissolution modeling parameters. The maximum dissolution rate Rmax is shown to exhibit two regions of Arrhenius behavior with a well defined activation energy for both. The dissolution selectivity parameter n proves to have a more complicated behavior.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark John Maslow, Chris A. Mack, Jeff D. Byers, "Effect of developer temperature and normality on chemically amplified photoresist dissolution", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350150; https://doi.org/10.1117/12.350150
PROCEEDINGS
11 PAGES


SHARE
Back to Top