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11 June 1999 Evaluation of electron beam stabilization for ion implant processing
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With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen Jack Buffat, Bee Kickel, B. Philipps, J. Adams, Matthew F. Ross, Jason P. Minter, Trey Marlowe, and Selmer S. Wong "Evaluation of electron beam stabilization for ion implant processing", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999);

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