11 June 1999 Measurement of parameters for simulation of deep-UV lithography using an FT-IR baking system
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Abstract
A system for measurement of deprotection reaction parameters for use with chemically amplified (CA) resist was developed by incorporating baking equipment into a FTIR spectrometer. Using this system, studies were conducted of a new model based on previous deprotection reaction models, but including the effects of deprotection reaction delay and the presence of a quencher. Used in these studies were a t- BOC/PHS resist for KrF excimer laser exposure, and a TBMA0.33-IBMA0.33-MMA0.33 copolymer resin resists for ArF excimer laser exposure. Deprotection reaction parameters for this model were measured for these two resist. The resulting parameters were then used with the PROLITH/2 lithography simulator for profile calculations, which were compared with SEM observations, general tendencies agreed quite well. This finding indicates that the present model may be reasonably applied to CA resists intended for KrF and ArF excimer laser exposure, and confirms the usefulness of the systems described for deprotection reaction parameter measurement.
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Atsushi Sekiguchi, Chris A. Mack, Mariko Isono, Toshiharu Matsuzawa, "Measurement of parameters for simulation of deep-UV lithography using an FT-IR baking system", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350149; https://doi.org/10.1117/12.350149
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