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11 June 1999 Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification
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Abstract
We have examined alicyclic polymers with a (gamma) -hydroxy acid structure in order to investigate the properties of (gamma) -hydroxy acid and (gamma) -lactone as function groups of ArF negative resist materials. From the viewpoint of transparency and dry-etching resistance, (gamma) -hydroxy acid and (gamma) -lactone structure were found to be suitable for ArF negative resists materials. Surprisingly, the reactivity of the acid-catalyzed reaction of (gamma) -hydroxy acid is affected by the polymer structure. Using ArF excimer laser stepper, 0.20-micrometers line-and-space patterns without micro-swelling distortion were obtained from a negative resist consisting of alicyclic polymer with the (gamma) - hydroxy acid structure and a photoacid generator. Distortion was avoided because the number of carboxyl groups decreased drastically in the exposed area by the acid-catalyzed intramolecular esterification of (gamma) -hydroxy acid to (gamma) -lactone. As a result, (gamma) -hydroxy acid and (gamma) -lactone structure were found to be suitable function groups for ArF negative resist materials.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Hattori, Yuko Tsuchiya, Yoshiyuki Yokoyama, Hiroaki Oizumi, Taku Morisawa, Atsuko Yamaguchi, and Hiroshi Shiraishi "Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350223
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