New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins

Ilya L. Rushkin; Francis M. Houlihan; Janet M. Kometani; Richard S. Hutton; Allen G. Timko; Elsa Reichmanis; Omkaram Nalamasu; Allen H. Gabor; Arturo N. Medina; Sydney G. Slater; Mark O. Neisser

doi:10.1117/12.350241

11 June 1999 New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins

Ilya L. Rushkin, Francis M. Houlihan, Janet M. Kometani, Richard S. Hutton, Allen G. Timko, Elsa Reichmanis, Omkaram Nalamasu, Allen H. Gabor, Arturo N. Medina, Sydney G. Slater, Mark O. Neisser

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350241
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

A series of new polymers for 193 nm single layer resist based on maleic anhydride/cycloolefin systems with minimum amount of acrylate units were synthesized. In order to minimize the acrylate content, the cycloolefin moiety of the polymers was functionalized with side groups designed to either promotes adhesion to silicon substrate and/or impart the imaging functionality. All polymers were prepared by free-radical polymerization in moderate to high yields and were characterized by variety of techniques. The initial lithographic evaluation of the new resists was carried out. It was found that acrylates can be successfully replaced with appropriately substituted cycloolefins to provide good resolution. The etch resistance of the new materials generally improves with increase in cycloolefin content. The Onishi and Kunz type plots will be discussed.

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Ilya L. Rushkin, Francis M. Houlihan, Janet M. Kometani, Richard S. Hutton, Allen G. Timko, Elsa Reichmanis, Omkaram Nalamasu, Allen H. Gabor, Arturo N. Medina, Sydney G. Slater, and Mark O. Neisser "New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350241

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