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11 June 1999 Non-chemically amplified 193-nm top surface imaging photoresist development: polymer substituent and polydispersity effects
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Thin film imaging processes such as top surface imaging (TSI) are candidates for sub-150 nm lithography using 193 nm lithography. Single component, non-chemically amplified, positive tone TSI photoresists based on phenolic polymers demonstrate good post-etch contrast, resolution, and minimal line edge roughness, in addition to being the most straightforward thin film imaging approach. In this approach, ArF laser exposure results directly in radiation- induced crosslinking of the phenolic polymer, followed by formation of a thin etch mask at the surface of the un- exposed regions by vapor-phase silylation, followed by reactive ion etching of the non-silylated regions. However, single component resists based on poly(para-hydroxystryene) (PHS), such as MicroChem's Nano MX-P7, suffer from slow photospeed as well as low silylation contrast which can cause reproducibility and line-edge-roughness problems. We report that selected aromatic substitution of the poly(para- hydroxystryene) polymer can increase the photospeed by up to a factor of four relative to un-substituted PHS. In this paper we report the synthesis and lithographic evaluations of four experimental TSI photoresists. MX-EX-1, MX-EX-2, MX- EX-3 and MX-EX-4 are non-chemically amplified resists based on aromatic substitutions of chloro- and hydroxymethyl- groups and PHS. We report optimized lithographic processing conditions, line edge roughness, silylation contrast, and compare the results to the parent PHS photoresist.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Myoung-Soo Kim, Hyoung-Gi Kim, Hyeong-Soo Kim, Ki-Ho Baik, Donald W. Johnson, George J. Cernigliaro, and David W. Minsek "Non-chemically amplified 193-nm top surface imaging photoresist development: polymer substituent and polydispersity effects", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350277;

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