11 June 1999 Novel e-beam resist with alicyclic olefin moieties for high etch selectivity
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Abstract
A novel copolymer with alicyclic olefin moieties for an electron beam resist has been developed. In general, methacrylate copolymers widely used in the field of E-beam lithography show a low etch resistance due to their linear backbone structure. Our goal was to enhance an etch selectivity to various substrates while maintaining a high resolution. We designed alicyclic olefin copolymers with highly rigid backbone structures to improve the etch selectivity and synthesized a copolymer resin, poly(2- hydroxyethyl 5-norbornene-2-carboxylate/t-butyl 5- norbornene-2-carbolate/5-norbornene 2-carboxylic acid/maleic anhydride), which is formed with alicyclic units in their main chains. This alicyclic backbone structure of copolymer affords better etch selectivity to various substrates without sacrificing its resolution than those of other methacrylate copolymers. Etch selectivities have been studied for polysilicon, silicon dioxide, and tungsten substrates, respectively. Our resists showed the etch selectivities comparable to that of typical KrF resist for polysilicon substrate and comparable to those of typical novolac resist for silicon dioxide and tungsten substrates. The effect of photo acid generator to the electron beam lithographic performance was also investigated.
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Sung-Eun Hong, Sung-Eun Hong, Chi-Hyeong Roh, Chi-Hyeong Roh, Jae Chang Jung, Jae Chang Jung, Min-Ho Jung, Min-Ho Jung, Hyeong-Soo Kim, Hyeong-Soo Kim, Ki-Ho Baik, Ki-Ho Baik, } "Novel e-beam resist with alicyclic olefin moieties for high etch selectivity", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350243; https://doi.org/10.1117/12.350243
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