Paper
11 June 1999 Optimization of the lithographic performance for lift-off processing
Wenyan Yin, Ward Fillmore, Kevin J. Dempsey
Author Affiliations +
Abstract
Shipley MICROPOSIT LOL lift-off technology exploits a develop rate difference in a resist, LOL1000 bi-layer system to generate retrograde profiles. This is an enabling technology for 'additive' processing. Deposition follows lithography and the resist is then 'lifted off' to generate a patterned layer.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenyan Yin, Ward Fillmore, and Kevin J. Dempsey "Optimization of the lithographic performance for lift-off processing", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350258
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Semiconducting wafers

Critical dimension metrology

Interfaces

Metals

Lithography

Scanning electron microscopy

Image processing

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