Positive ArF resist with 2EAdMA/GBLMA resin system

Yasunori Uetani; Hiroaki Fujishima; Kaoru Araki; Kazuhisa Endo; Ichiki Takemoto

doi:10.1117/12.350233

11 June 1999 Positive ArF resist with 2EAdMA/GBLMA resin system

Yasunori Uetani, Hiroaki Fujishima, Kaoru Araki, Kazuhisa Endo, Ichiki Takemoto

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350233
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

We compared 2MAdMA(2-Metyl-2- Adamantylmethacrylate)/GBLMA((gamma) -butyrolactone methacrylate) resin system and 2EAdMA(2-Etyl-2- Adamantylmethacrylate)/GBLMA resin system. 2EAdMA/GBLMA resin system showed higher sensitivity, dissolution contrast and better adhesion to silicon substrate than 2MAdMA/GBLMA resin system. These results shows that 2EAdMA/GBLMA resin system is suitable for practical ArF positive resist.

Citation Download Citation

Yasunori Uetani, Hiroaki Fujishima, Kaoru Araki, Kazuhisa Endo, and Ichiki Takemoto "Positive ArF resist with 2EAdMA/GBLMA resin system", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350233

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