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11 June 1999 Positive ArF resist with 2EAdMA/GBLMA resin system
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Abstract
We compared 2MAdMA(2-Metyl-2- Adamantylmethacrylate)/GBLMA((gamma) -butyrolactone methacrylate) resin system and 2EAdMA(2-Etyl-2- Adamantylmethacrylate)/GBLMA resin system. 2EAdMA/GBLMA resin system showed higher sensitivity, dissolution contrast and better adhesion to silicon substrate than 2MAdMA/GBLMA resin system. These results shows that 2EAdMA/GBLMA resin system is suitable for practical ArF positive resist.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasunori Uetani, Hiroaki Fujishima, Kaoru Araki, Kazuhisa Endo, and Ichiki Takemoto "Positive ArF resist with 2EAdMA/GBLMA resin system", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350233; https://doi.org/10.1117/12.350233
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