11 June 1999 Progress of a CVD-based photoresist 193-nm lithography process
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Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999); doi: 10.1117/12.350216
Event: Microlithography '99, 1999, Santa Clara, CA, United States
Abstract
Plasma polymerized organosilane resists films have been shown to exhibit high sensitivity to DUV radiation. We have previously demonstrated a 193nm CVD photoresist process in which plasma polymerized methylsilane (PPMS) is patterned via photo-oxidation, dry-developed, converted into silicon dioxide, and then transferred into an underlying Si layer with high selectivity. The PPMS resist exhibits linearity down to a resolution of 130 nm L/S for a 1:1 pitch. We have demonstrated 100 nm Iso-lines at 28 mJ/cm2 dose with 11 percent dose latitude and 600 nm focus latitude. Depths of focus greater than 500 nm have been demonstrated for 160 nm nested L/S.
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Carol Y. Lee, Dian Sugiarto, Ling Liao, David Mui, Timothy W. Weidman, Michael P. Nault, Tony Tryba, "Progress of a CVD-based photoresist 193-nm lithography process", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350216; https://doi.org/10.1117/12.350216
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KEYWORDS
Etching

Line edge roughness

Plasma

Oxidation

Lithography

Chemical vapor deposition

Polymers

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