11 June 1999 Suppression of resist pattern deformation on SiON bottom antireflective layer in deep-UV lithography
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The interaction between a chemical amplification (CA) resist and a bottom anti-reflective layer (BARL) was clarified to find ways to suppress the resist pattern deformation in the BARL. A SiON film, which is a candidate for use as a BARL material, was analyzed by Fourier transform IR attenuated total reflection spectroscopy, thermal desorption spectroscopy, and x-ray photoelectron spectroscopy (XPS). The Si-NHx, Si-NSi2, Si-OH and Si-OSi groups were identified as the interaction sites on SiON. The effects of those sites on the acid that catalyzes the in-resist reactions were estimated with the partial charge and the at of formation calculated by a molecular-orbital method. The calculation results indicated that the Si-NHx groups completely decompose the acid, and the Si-OH groups decompose it to some extent. The other groups only trap the acid. The strong acid has high affinity and reactivity with those sites. However, a strong acid making a weak bond with the sites on SiON is likely to have a high catalytic ability. This advantage of the strong acid was confirmed by pattern delineation with a resist including onium-salt- generating CF3SO3H.
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Ryoko Yamanaka, Ryoko Yamanaka, Takashi Hattori, Takashi Hattori, Toshiyuki Mine, Toshiyuki Mine, Keiko T. Hattori, Keiko T. Hattori, Toshihiko P. Tanaka, Toshihiko P. Tanaka, Tsuneo Terasawa, Tsuneo Terasawa, } "Suppression of resist pattern deformation on SiON bottom antireflective layer in deep-UV lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350202; https://doi.org/10.1117/12.350202

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