11 June 1999 Suppression of resist pattern deformation on SiON bottom antireflective layer in deep-UV lithography
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Abstract
The interaction between a chemical amplification (CA) resist and a bottom anti-reflective layer (BARL) was clarified to find ways to suppress the resist pattern deformation in the BARL. A SiON film, which is a candidate for use as a BARL material, was analyzed by Fourier transform IR attenuated total reflection spectroscopy, thermal desorption spectroscopy, and x-ray photoelectron spectroscopy (XPS). The Si-NHx, Si-NSi2, Si-OH and Si-OSi groups were identified as the interaction sites on SiON. The effects of those sites on the acid that catalyzes the in-resist reactions were estimated with the partial charge and the at of formation calculated by a molecular-orbital method. The calculation results indicated that the Si-NHx groups completely decompose the acid, and the Si-OH groups decompose it to some extent. The other groups only trap the acid. The strong acid has high affinity and reactivity with those sites. However, a strong acid making a weak bond with the sites on SiON is likely to have a high catalytic ability. This advantage of the strong acid was confirmed by pattern delineation with a resist including onium-salt- generating CF3SO3H.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryoko Yamanaka, Ryoko Yamanaka, Takashi Hattori, Takashi Hattori, Toshiyuki Mine, Toshiyuki Mine, Keiko T. Hattori, Keiko T. Hattori, Toshihiko P. Tanaka, Toshihiko P. Tanaka, Tsuneo Terasawa, Tsuneo Terasawa, } "Suppression of resist pattern deformation on SiON bottom antireflective layer in deep-UV lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350202; https://doi.org/10.1117/12.350202
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