Theoretical analysis of line-edge roughness using FFT techniques

Takeshi Ohfuji; Masayuki Endo; Hiroaki Morimoto

doi:10.1117/12.350261

11 June 1999 Theoretical analysis of line-edge roughness using FFT techniques

Takeshi Ohfuji, Masayuki Endo, Hiroaki Morimoto

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350261
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Although the line-edge roughness of resist patterns is becoming a serious problem as the size of resist patterns are decreased, quantitative analysis has rarely been seen so far. We investigate the line-edge roughness of ArF resist patterns using the FFT method. We found that all the observed line-edge roughness had a specific FFT spectrum shape composed of a flat area at low frequency and a 1 (root) f component area at high frequency. The amount of line-edge roughness is independent of dose and linewidth but has a strong dependence on defocus. The patterns formed using TSI also have similar FFT spectrum shapes. Based on these findings, we proposed a line-edge roughness simulation method that achieves the observed FFT spectrum.

Citation Download Citation

Takeshi Ohfuji, Masayuki Endo, and Hiroaki Morimoto "Theoretical analysis of line-edge roughness using FFT techniques", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350261

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