Paper
11 June 1999 Top antireflective coating process for deep-UV lithography
Allen C. Fung, Binder K. Mann, Ronald J. Eakin, Pierre Silvestre, Brad Williams, Jason Miyake, Yusuke Takano
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Abstract
This paper will evaluate the potential improvements with the addition of an aqueous based top antireflective coating to a Deep-UV process. This antireflective coating (ARC) is resistant to intermixing with the resists and is removed during the normal develop operation. A logic IC with 0.15- 0.18 micrometers design rules will be the primary test vehicle, concentrating on Contact/VIA levels. Performance will be compare with and without the top ARC. Uniformity of measured critical dimensions (CD) will be compared. CD/dose swing curve suppression, as a function of substrate and resist thickness, will be documented. The Deep-UV resist/top ARC application will be optimized, as well, to maximize throughput.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Allen C. Fung, Binder K. Mann, Ronald J. Eakin, Pierre Silvestre, Brad Williams, Jason Miyake, and Yusuke Takano "Top antireflective coating process for deep-UV lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350147
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Cited by 1 scholarly publication.
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KEYWORDS
Critical dimension metrology

Deep ultraviolet

Reflectivity

Semiconducting wafers

Oxides

Antireflective coatings

Photoresist processing

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