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11 June 1999 Toward the ultimate storage device: the fabrication of an ultrahigh-density memory device with 193-nm lithography
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Abstract
We describe the fabrication of the world's smallest fully functional conventional non-volatile memory device using 193 nm lithography for all levels. The cell area of the smallest devices fabricated was 0.0896 micrometers 2. The critical level of the device, to define the channel length, was exposed with an alternating aperture phase shift mask. Floating gate dimensions ranged from 0.080 to 0.14 micrometers . Subsequent lithography, to define the control gate utilized a binary mask with gate dimensions down to 0.16 micrometers . A multi-layer ARC was used to reduce substrate reflections and maintain linewidth control over topography. All levels were exposed with a new single layer chemically amplified resist developed for 193 nm lithography. We will present results for line width control, etch bias, implementation of resolution enhancement techniques as well as issues with process integration.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raymond A. Cirelli, J. Bude, William M. Mansfield, G. L. Timp, Fred P. Klemens, Pat G. Watson, Gary R. Weber, James R. Sweeney, Francis M. Houlihan, Allen H. Gabor, Fred Baumann, M. Buonanno, G. F. Forsyth, D. Barr, T. C. Lee, C. S. Rafferty, Richard S. Hutton, Allen G. Timko, J. Hergenrother, Elsa Reichmanis, Lloyd R. Harriott, S. J. Hillenius, and Omkaram Nalamasu "Toward the ultimate storage device: the fabrication of an ultrahigh-density memory device with 193-nm lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350213
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