Image Quality I
Image Quality II
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Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask: II. Experimental results
Imaging contrast improvement for 160-nm line features using subresolution assist features with binary, six percent ternary attenuated phase-shift mask with process-tuned resist
CD control comparison for sub-0.18-μm patterning using 248-nm lithography and strong resolution enhancement techniques
Challenge to sub-0.1-μm pattern fabrication using an alternating phase-shifting mask in ArF lithography
Higher-order aberration measurement with printed patterns under extremely reduced sigma illumination