26 July 1999 0.18-μm technology at contact level: deep-UV process development by tuning NA/o and using a bottom antireflective coating
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Abstract
This paper presents the process development of the contact level of a logic 0.18micrometers technology. The influence of the illumination condition, on the energy-focus process latitude of isolated and dense contacts is studied. The effect of negative and positive bias on reticule is also quantified. The experiments are performed on both flat silicon wafers and real production wafers. The resist process consists in a t-BOC resist over an organic BARC.
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Gilles R. Amblard, Gilles R. Amblard, Jean-Paul E. Chollet, Jean-Paul E. Chollet, } "0.18-μm technology at contact level: deep-UV process development by tuning NA/o and using a bottom antireflective coating", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354302; https://doi.org/10.1117/12.354302
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