26 July 1999 193-nm lithography on a full-field scanner
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Abstract
In this paper, the lithographic performance of advanced 193 nm resist materials has been evaluated on a full field step and scan system. Single layer and bi-layer resist processes are compared in terms of performance and complexity. Optimization of illumination conditions is investigated as a way to enlarge processing windows and to reduce iso-dense bias. The application of a PSM illustrates the extendibility of 193 nm lithography for the 100- nm technology node.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anne-Marie Goethals, Anne-Marie Goethals, Ingrid Pollers, Ingrid Pollers, Patrick Jaenen, Patrick Jaenen, Frieda Van Roey, Frieda Van Roey, Kurt G. Ronse, Kurt G. Ronse, Barbra Heskamp, Barbra Heskamp, Guy Davies, Guy Davies, } "193-nm lithography on a full-field scanner", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354340; https://doi.org/10.1117/12.354340
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