26 July 1999 193-nm lithography on a full-field scanner
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In this paper, the lithographic performance of advanced 193 nm resist materials has been evaluated on a full field step and scan system. Single layer and bi-layer resist processes are compared in terms of performance and complexity. Optimization of illumination conditions is investigated as a way to enlarge processing windows and to reduce iso-dense bias. The application of a PSM illustrates the extendibility of 193 nm lithography for the 100- nm technology node.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anne-Marie Goethals, Anne-Marie Goethals, Ingrid Pollers, Ingrid Pollers, Patrick Jaenen, Patrick Jaenen, Frieda Van Roey, Frieda Van Roey, Kurt G. Ronse, Kurt G. Ronse, Barbra Heskamp, Barbra Heskamp, Guy Davies, Guy Davies, "193-nm lithography on a full-field scanner", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354340; https://doi.org/10.1117/12.354340

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