26 July 1999 ARC technology to minimize CD variations during emitter structuring: experiment and simulation
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Abstract
Coming out of our in-house SiGe-hetero-bipolar-technology we found that the variations of some of the important electrical parameter like the emitter current are depending on the variations of the critical dimension (CD) during the emitter structuring and this effect is mainly caused by the used i-line photolithography. To minimize the CD variations we used anti reflective coatings. For comparison reasons we applied three different resist technologies, without any ARC, with top ARC (TARC), and with bottom ARC (BARC). During our 0.4 micrometers emitter structuring the CD variations could be reduced down to +/- 40-30 nm for the resists and the resist/TARC combination. The smallest CD variation +/- nm was found by applying the BARC Resist Technology. As an optimization strategy calculations of the resist reflection and the resist absorption were very helpful.
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Joachim J. Bauer, G. Drescher, Ulrich A. Jagdhold, Ulrich Haak, T. Skaloud, "ARC technology to minimize CD variations during emitter structuring: experiment and simulation", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354303; https://doi.org/10.1117/12.354303
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