26 July 1999 ArF step-and-scan exposure system for 0.15-μm and 0.13-μm technology nodes
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Abstract
This paper presents an evaluation on the 0.15 micrometers and 0.13 micrometers lithographic patterning alternatives for semiconductor devices. Baseline for the evaluation is a first generation ArF step and scan exposure system with 0.63 NA projection optics. The system layout is discussed and main performance data on imaging, overlay and throughput are presented. Binary masks, and various advanced 193 nm resist system are used to evalute process latitudes of dense lines, isolated lines and contact holes. The manufacturing economics, expressed in Cost Of Ownership, are evaluated for an ArF based production technology, and compared to critical layer KrF.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Mulkens, Jan Mulkens, Judon M. D. Stoeldraijer, Judon M. D. Stoeldraijer, Guy Davies, Guy Davies, Marcel Dierichs, Marcel Dierichs, Barbra Heskamp, Barbra Heskamp, Marco H. P. Moers, Marco H. P. Moers, Richard A. George, Richard A. George, Oliver Roempp, Oliver Roempp, Holger Glatzel, Holger Glatzel, Christian Wagner, Christian Wagner, Ingrid Pollers, Ingrid Pollers, Patrick Jaenen, Patrick Jaenen, } "ArF step-and-scan exposure system for 0.15-μm and 0.13-μm technology nodes", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354362; https://doi.org/10.1117/12.354362
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